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IPP80P03P4L-07 PDF预览

IPP80P03P4L-07

更新时间: 2024-09-28 05:39:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 170K
描述
OptiMOS-P2 Power-Transistor

IPP80P03P4L-07 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):135 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0072 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):88 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPP80P03P4L-07 数据手册

 浏览型号IPP80P03P4L-07的Datasheet PDF文件第2页浏览型号IPP80P03P4L-07的Datasheet PDF文件第3页浏览型号IPP80P03P4L-07的Datasheet PDF文件第4页浏览型号IPP80P03P4L-07的Datasheet PDF文件第5页浏览型号IPP80P03P4L-07的Datasheet PDF文件第6页浏览型号IPP80P03P4L-07的Datasheet PDF文件第7页 
IPB80P03P4L-07  
IPI80P03P4L-07, IPP80P03P4L-07  
OptiMOS®-P2 Power-Transistor  
Product Summary  
VDS  
-30  
6.9  
-80  
V
R
DS(on) (SMD Version)  
m  
A
I D  
Features  
• P-channel - Logic Level - Enhancement mode  
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green package (RoHS compliant)  
• 100% Avalanche tested  
• Intended for reverse battery protection  
Type  
Package  
Marking  
4P03L07  
4P03L07  
4P03L07  
IPB80P03P4L-07  
IPI80P03P4L-07  
IPP80P03P4L-07  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
T C=25°C,  
GS=-10V1)  
I D  
Continuous drain current  
-80  
A
V
T C=100°C,  
GS=-10V2)  
-65  
V
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25°C  
-320  
135  
I D=-40A  
Avalanche energy, single pulse  
Avalanche current, single pulse  
Gate source voltage  
mJ  
A
-
-80  
VGS  
Ptot  
-
+5/-16  
88  
V
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2008-07-29  

IPP80P03P4L-07 替代型号

型号 品牌 替代类型 描述 数据表
IPI80P03P4L-07 INFINEON

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OptiMOS-P2 Power-Transistor

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