是否Rohs认证: | 符合 | 生命周期: | End Of Life |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 6.88 | 雪崩能效等级(Eas): | 97 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 900 V |
最大漏极电流 (ID): | 5.7 A | 最大漏源导通电阻: | 1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 12 A | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP90R1K2C3 | INFINEON |
获取价格 |
CoolMOS? Power Transistor | |
IPP90R1K2C3XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IPP90R1K2C3XKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IPP90R340C3 | INFINEON |
获取价格 |
CoolMOS? Power Transistor | |
IPP90R340C3XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Met | |
IPP90R340C3XKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IPP90R500C3 | INFINEON |
获取价格 |
CoolMOS? Power Transistor | |
IPP90R800C3 | INFINEON |
获取价格 |
CoolMOS? Power Transistor | |
IPP-AB201-10 | IPP |
获取价格 |
ATTENUATOR, 10 WATT, FLANGE | |
IPP-AB201-11 | IPP |
获取价格 |
ATTENUATOR, 10 WATT, FLANGE |