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IPP90R500C3 PDF预览

IPP90R500C3

更新时间: 2024-11-05 11:08:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
10页 294K
描述
CoolMOS? Power Transistor

IPP90R500C3 数据手册

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IPP90R500C3  
CoolMOSPower Transistor  
Features  
Product Summary  
V
R
DS @ T J=25°C  
900  
0.5  
68  
V
• Lowest figure-of-merit RON x Qg  
• Extreme dv/dt rated  
DS(on),max @ T J= 25°C  
Q g,typ  
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO220  
CoolMOS™ 900V is designed for:  
• Quasi Resonant Flyback / Forward topologies  
• PC Silverbox and consumer applications  
• Industrial SMPS  
Type  
Package  
Marking  
IPP90R500C3  
PG-TO220  
9R500C  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
11  
6.8  
Continuous drain current  
A
Pulsed drain current2)  
24  
I D,pulse  
E AS  
I D=2.2 A, V DD=50 V  
I D=2.2 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
388  
mJ  
2),3)  
2),3)  
E AR  
0.74  
2.2  
I AR  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V
DS=0...400 V  
50  
dv /dt  
V GS  
V/ns  
V
±20  
static  
±30  
AC (f>1 Hz)  
T C=25 °C  
P tot  
156  
Power dissipation  
W
T J, T stg  
-55 ... 150  
60  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 1.0  
2008-07-29  

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