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IPP90R1K2C3XKSA2 PDF预览

IPP90R1K2C3XKSA2

更新时间: 2024-11-16 14:35:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 293K
描述
Power Field-Effect Transistor,

IPP90R1K2C3XKSA2 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:18 weeks
风险等级:2.06峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IPP90R1K2C3XKSA2 数据手册

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IPP90R1K2C3  
CoolMOSPower Transistor  
Features  
Product Summary  
V
R
DS @ T J=25°C  
900  
1.2  
28  
V
• Lowest figure-of-merit RON x Qg  
• Extreme dv/dt rated  
DS(on),max @T J=25°C  
Q g,typ  
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO220  
CoolMOS™ 900V is designed for:  
• Quasi Resonant Flyback / Forward topologies  
• PC Silverbox and consumer applications  
• Industrial SMPS  
Type  
Package  
Marking  
IPP90R1K2C3  
PG-TO220  
9R1K2C  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
5.1  
3.2  
Continuous drain current  
A
2)  
10  
I D,pulse  
E AS  
Pulsed drain current  
I D=0.92 A, V DD=50 V  
I D=0.92 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
68  
mJ  
2),3)  
2),3)  
E AR  
0.31  
0.92  
50  
I AR  
A
V
DS=0...400 V  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
83  
static  
AC (f>1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T J, T stg  
-55 ... 150  
60  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 1.0  
2008-07-30  

IPP90R1K2C3XKSA2 替代型号

型号 品牌 替代类型 描述 数据表
IPP90R1K2C3XKSA1 INFINEON

类似代替

Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Met

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