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IPP90R1K0C3 PDF预览

IPP90R1K0C3

更新时间: 2024-11-16 11:08:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 289K
描述
CoolMOS? Power Transistor

IPP90R1K0C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:5.25雪崩能效等级(Eas):97 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):5.7 A最大漏极电流 (ID):5.7 A
最大漏源导通电阻:1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):89 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPP90R1K0C3 数据手册

 浏览型号IPP90R1K0C3的Datasheet PDF文件第2页浏览型号IPP90R1K0C3的Datasheet PDF文件第3页浏览型号IPP90R1K0C3的Datasheet PDF文件第4页浏览型号IPP90R1K0C3的Datasheet PDF文件第5页浏览型号IPP90R1K0C3的Datasheet PDF文件第6页浏览型号IPP90R1K0C3的Datasheet PDF文件第7页 
IPP90R1K0C3  
CoolMOSPower Transistor  
Features  
Product Summary  
V
R
DS @ T J=25°C  
900  
1.0  
34  
V
• Lowest figure-of-merit RON x Qg  
• Extreme dv/dt rated  
DS(on),max @ T J= 25°C  
Q g,typ  
nC  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Ultra low gate charge  
PG-TO220  
CoolMOS™ 900V is designed for:  
• Quasi Resonant Flyback / Forward topologies  
• PC Silverbox and consumer applications  
• Industrial SMPS  
Type  
Package  
Marking  
IPP90R1K0C3  
PG-TO220  
9R1K0C  
Maximum ratings, at T J=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
5.7  
3.6  
Continuous drain current  
A
Pulsed drain current 2)  
12  
I D,pulse  
E AS  
I D=1.1 A, V DD=50 V  
I D=1.1 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
97  
mJ  
2),3)  
2),3)  
E AR  
0.37  
1.1  
I AR  
A
V
DS=0...400 V  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
89  
static  
AC (f>1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T J, T stg  
-55 ... 150  
60  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 1.0  
2008-07-29  

IPP90R1K0C3 替代型号

型号 品牌 替代类型 描述 数据表
IPI90R1K0C3 INFINEON

完全替代

CoolMOS? Power Transistor
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