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IPP90N04S4-02 PDF预览

IPP90N04S4-02

更新时间: 2024-11-16 12:20:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 164K
描述
OptiMOS-T2 Power-Transistor

IPP90N04S4-02 数据手册

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IPB90N04S4-02  
IPI90N04S4-02, IPP90N04S4-02  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
40  
2.1  
90  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
4N0402  
4N0402  
4N0402  
IPB90N04S4-02  
IPI90N04S4-02  
IPP90N04S4-02  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
90  
90  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25°C  
360  
475  
90  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=45A  
mJ  
A
-
VGS  
Ptot  
-
±20  
150  
V
T C=25°C  
Power dissipation  
W
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
Rev. 1.1  
page 1  
2010-07-01  

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