5秒后页面跳转
IPP80N06S3-05 PDF预览

IPP80N06S3-05

更新时间: 2024-09-28 11:08:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
9页 194K
描述
OptiMOS-T2 Power-Transistor

IPP80N06S3-05 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:GREEN, PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.61
Is Samacsys:N雪崩能效等级(Eas):345 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0054 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):165 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPP80N06S3-05 数据手册

 浏览型号IPP80N06S3-05的Datasheet PDF文件第2页浏览型号IPP80N06S3-05的Datasheet PDF文件第3页浏览型号IPP80N06S3-05的Datasheet PDF文件第4页浏览型号IPP80N06S3-05的Datasheet PDF文件第5页浏览型号IPP80N06S3-05的Datasheet PDF文件第6页浏览型号IPP80N06S3-05的Datasheet PDF文件第7页 
IPB80N06S3-05  
IPI80N06S3-05, IPP80N06S3-05  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
55  
5.1  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB80N06S3-05  
IPI80N06S3-05  
IPP80N06S3-05  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
3N0605  
3N0605  
3N0605  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
80  
80  
A
V
GS=10 V2)  
Pulsed drain current2)  
Avalanche energy, single pulse2)  
I D,pulse  
EAS  
T C=25 °C  
I D=40 A  
320  
345  
mJ  
A
I AS  
Avalanche current, single pulse  
80  
Gate source voltage3)  
VGS  
±20  
V
Ptot  
T C=25 °C  
Power dissipation  
165  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.1  
page 1  
2007-11-07  

与IPP80N06S3-05相关器件

型号 品牌 获取价格 描述 数据表
IPP80N06S3-07 INFINEON

获取价格

OptiMOS-T Power-Transistor
IPP80N06S3L-05 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPP80N06S3L-06 INFINEON

获取价格

OptiMOS㈢-T Power-Transistor
IPP80N06S3L-08 INFINEON

获取价格

OptiMOS㈢-T Power-Transistor
IPP80N06S4-05 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPP80N06S4-07 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPP80N06S407AKSA2 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Me
IPP80N06S4L-05 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPP80N06S4L05AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me
IPP80N06S4L05AKSA2 INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Me