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IPP80N04S4L04AKSA1 PDF预览

IPP80N04S4L04AKSA1

更新时间: 2024-11-23 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
9页 161K
描述
Power Field-Effect Transistor, 80A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPP80N04S4L04AKSA1 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:2.19Is Samacsys:N
雪崩能效等级(Eas):100 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.0043 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):320 A表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPP80N04S4L04AKSA1 数据手册

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IPB80N04S4L-04  
IPI80N04S4L-04, IPP80N04S4L-04  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
40  
4.0  
80  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB80N04S4L-04  
IPI80N04S4L-04  
IPP80N04S4L-04  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
4N04L04  
4N04L04  
4N04L04  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
80  
80  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25°C  
320  
100  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=40A  
mJ  
A
-
80  
VGS  
Ptot  
-
+20/-16  
71  
V
T C=25°C  
Power dissipation  
W
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
Rev. 1.0  
page 1  
2010-04-13  

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