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IPP111N15N3G PDF预览

IPP111N15N3G

更新时间: 2024-11-20 05:39:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体栅极晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 434K
描述
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPP111N15N3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.69Is Samacsys:N
雪崩能效等级(Eas):330 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):83 A
最大漏极电流 (ID):83 A最大漏源导通电阻:0.0111 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):214 W最大脉冲漏极电流 (IDM):332 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPP111N15N3G 数据手册

 浏览型号IPP111N15N3G的Datasheet PDF文件第2页浏览型号IPP111N15N3G的Datasheet PDF文件第3页浏览型号IPP111N15N3G的Datasheet PDF文件第4页浏览型号IPP111N15N3G的Datasheet PDF文件第5页浏览型号IPP111N15N3G的Datasheet PDF文件第6页浏览型号IPP111N15N3G的Datasheet PDF文件第7页 
IPB108N15N3 G IPP111N15N3 G  
IPI111N15N3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
V DS  
150  
10.8  
83  
V
• N-channel, normal level  
R DS(on),max (TO263)  
I D  
mΩ  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant; Halogen free  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
•Halogen-free according to IEC61249-2-21  
Type  
IPB108N15N3 G  
IPP111N15N3 G  
IPI111N15N3 G  
Package  
Marking  
PG-TO263-3  
108N15N  
PG-TO220-3  
111N15N  
PG-TO262-3  
111N15N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
83  
59  
A
Pulsed drain current2)  
I D,pulse  
E AS  
332  
I D=83 A, R GS=25 Ω  
Avalanche energy, single pulse  
Gate source voltage  
330  
mJ  
V
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
214  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) See figure 3  
Rev. 2.1  
page 1  
2009-12-01  

IPP111N15N3G 替代型号

型号 品牌 替代类型 描述 数据表
IPP200N15N3G INFINEON

功能相似

OptiMOS™3 Power-Transistor Features Excellent

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