是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 14 weeks | 风险等级: | 5.69 |
雪崩能效等级(Eas): | 920 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (ID): | 120 A | 最大漏源导通电阻: | 0.0028 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 480 A | 参考标准: | AEC-Q101 |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP120N08S4-04 | INFINEON |
获取价格 |
? 仿真/ SPICE-型号 | |
IPP120N10S4-03 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IPP120N10S403AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, | |
IPP120N10S4-05 | INFINEON |
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Power Field-Effect Transistor | |
IPP120N10S405AKSA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 100V, 0.0053ohm, 1-Element, N-Channel, Silicon, | |
IPP120N20NFD | INFINEON |
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Power Field-Effect Transistor, 84A I(D), 200V, 0.012ohm, 1-Element, N-Channel, Silicon, Me | |
IPP120N20NFDAKSA1 | INFINEON |
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Power Field-Effect Transistor, 84A I(D), 200V, 0.012ohm, 1-Element, N-Channel, Silicon, Me | |
IPP120P04P4-04 | INFINEON |
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OptiMOS-P2 Power-Transistor | |
IPP120P04P4L-03 | INFINEON |
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OptiMOS-P2 Power-Transistor | |
IPP120P04P4L03AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, M |