是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | not_compliant | Factory Lead Time: | 1 week |
风险等级: | 5.82 | 雪崩能效等级(Eas): | 1060 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 120 A |
最大漏源导通电阻: | 0.0024 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 480 A | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP120N08S4-03 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, M | |
IPP120N08S403AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, M | |
IPP120N08S4-04 | INFINEON |
获取价格 |
? 仿真/ SPICE-型号 | |
IPP120N10S4-03 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IPP120N10S403AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, | |
IPP120N10S4-05 | INFINEON |
获取价格 |
Power Field-Effect Transistor | |
IPP120N10S405AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 100V, 0.0053ohm, 1-Element, N-Channel, Silicon, | |
IPP120N20NFD | INFINEON |
获取价格 |
Power Field-Effect Transistor, 84A I(D), 200V, 0.012ohm, 1-Element, N-Channel, Silicon, Me | |
IPP120N20NFDAKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 84A I(D), 200V, 0.012ohm, 1-Element, N-Channel, Silicon, Me | |
IPP120P04P4-04 | INFINEON |
获取价格 |
OptiMOS-P2 Power-Transistor |