5秒后页面跳转
IPP120N06S4H1AKSA2 PDF预览

IPP120N06S4H1AKSA2

更新时间: 2024-10-01 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
9页 171K
描述
Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPP120N06S4H1AKSA2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:not_compliantFactory Lead Time:1 week
风险等级:5.82雪崩能效等级(Eas):1060 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):120 A
最大漏源导通电阻:0.0024 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):480 A表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPP120N06S4H1AKSA2 数据手册

 浏览型号IPP120N06S4H1AKSA2的Datasheet PDF文件第2页浏览型号IPP120N06S4H1AKSA2的Datasheet PDF文件第3页浏览型号IPP120N06S4H1AKSA2的Datasheet PDF文件第4页浏览型号IPP120N06S4H1AKSA2的Datasheet PDF文件第5页浏览型号IPP120N06S4H1AKSA2的Datasheet PDF文件第6页浏览型号IPP120N06S4H1AKSA2的Datasheet PDF文件第7页 
IPB120N06S4-H1  
IPI120N06S4-H1, IPP120N06S4-H1  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
60  
2.1  
120  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB120N06S4-H1  
IPI120N06S4-H1  
IPP120N06S4-H1  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
4N06H1  
4N06H1  
4N06H1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
120  
120  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
480  
1060  
120  
±20  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=60A  
mJ  
A
I AS  
-
VGS  
-
V
Ptot  
T C=25°C  
Power dissipation  
250  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
Rev. 1.0  
page 1  
2009-03-23  

与IPP120N06S4H1AKSA2相关器件

型号 品牌 获取价格 描述 数据表
IPP120N08S4-03 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, M
IPP120N08S403AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, M
IPP120N08S4-04 INFINEON

获取价格

? 仿真/ SPICE-型号
IPP120N10S4-03 INFINEON

获取价格

Power Field-Effect Transistor,
IPP120N10S403AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon,
IPP120N10S4-05 INFINEON

获取价格

Power Field-Effect Transistor
IPP120N10S405AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 100V, 0.0053ohm, 1-Element, N-Channel, Silicon,
IPP120N20NFD INFINEON

获取价格

Power Field-Effect Transistor, 84A I(D), 200V, 0.012ohm, 1-Element, N-Channel, Silicon, Me
IPP120N20NFDAKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 84A I(D), 200V, 0.012ohm, 1-Element, N-Channel, Silicon, Me
IPP120P04P4-04 INFINEON

获取价格

OptiMOS-P2 Power-Transistor