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IPP120N06NG PDF预览

IPP120N06NG

更新时间: 2024-02-16 13:53:00
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 445K
描述
OptiMOS㈢ Power-Transistor

IPP120N06NG 数据手册

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IPB120N06N G  
IPP120N06N G  
OptiMOS® Power-Transistor  
Product Summary  
Features  
V DS  
60  
11.7  
75  
V
• For fast switching converters and sync. rectification  
• N-channel enhancement - normal level  
R DS(on),max SMDversion  
I D  
m  
A
• 175 °C operating temperature  
• Avalanche rated  
• Pb-free lead plating, RoHS compliant  
IPP120N06N G  
IPB120N06N G  
Type  
P-TO220-3-1  
120N06N  
P-TO263-3-2  
120N06N  
Package  
Marking  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
Continuous drain current  
75  
53  
A
T C=100 °C  
T C=25 °C1)  
I D,pulse  
E AS  
Pulsed drain current  
300  
280  
I D=75 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=75 A, V DS=48 V,  
di /dt =200 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
V GS  
Gate source voltage  
±20  
V
P tot  
T C=25 °C  
Power dissipation  
158  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1) See figure 3  
Rev. 1.11  
page 1  
2006-07-05  

IPP120N06NG 替代型号

型号 品牌 替代类型 描述 数据表
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