5秒后页面跳转
IPP114N12N3GXKSA1 PDF预览

IPP114N12N3GXKSA1

更新时间: 2024-02-03 19:24:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 303K
描述
Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

IPP114N12N3GXKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:18 weeks风险等级:2.23
雪崩能效等级(Eas):120 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):75 A
最大漏源导通电阻:0.0114 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):300 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPP114N12N3GXKSA1 数据手册

 浏览型号IPP114N12N3GXKSA1的Datasheet PDF文件第2页浏览型号IPP114N12N3GXKSA1的Datasheet PDF文件第3页浏览型号IPP114N12N3GXKSA1的Datasheet PDF文件第4页浏览型号IPP114N12N3GXKSA1的Datasheet PDF文件第5页浏览型号IPP114N12N3GXKSA1的Datasheet PDF文件第6页浏览型号IPP114N12N3GXKSA1的Datasheet PDF文件第7页 
IPP114N12N3 G  
OptiMOSTM3 Power-Transistor  
Features  
Product Summary  
VDS  
120  
11.4  
75  
V
• N-channel, normal level  
R
DS(on)max  
ID  
mΩ  
• Excellent gate charge x R DS(on) product (FOM)  
A
• Very low on-resistance R DS(on)  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant; halogen free  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPP114N12N3 G  
Package  
Marking  
PG-TO220-3  
114N12N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
75  
53  
A
Pulsed drain current2)  
I D,pulse  
300  
E AS  
I D=75 A, R GS=25 Ω  
Avalanche energy, single pulse  
120  
mJ  
Gate source voltage3)  
V GS  
±20  
V
P tot  
T C=25 °C  
Power dissipation  
136  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) see figure 3  
3)  
T
=150°C and duty cycle D=0.01 for Vgs<-5V  
jmax  
Rev. 2.4  
page 1  
2011-11-25  

与IPP114N12N3GXKSA1相关器件

型号 品牌 获取价格 描述 数据表
IPP-1171 IPP

获取价格

OUTLINE 4-WAY
IPP-1176 IPP

获取价格

OUTLINE 2-WAY
IPP-1177 IPP

获取价格

OUTLINE 4-WAY
IPP-1188 IPP

获取价格

OUTLINE 2-WAY
IPP11N03LA INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPP120N04S3-02 INFINEON

获取价格

OptiMOS-T Power-Transistor
IPP120N04S302AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, M
IPP120N04S4-01 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPP120N04S401AKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 120A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, M
IPP120N04S4-02 INFINEON

获取价格

OptiMOS-T2 Power-Transistor