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IPP100N06S3-03 PDF预览

IPP100N06S3-03

更新时间: 2024-11-25 03:06:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
8页 162K
描述
OptiMOS㈢-T Power-Transistor

IPP100N06S3-03 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:GREEN, PLASTIC, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.27
其他特性:AVALANCHE RATED雪崩能效等级(Eas):2390 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):100 A最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0033 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):400 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPP100N06S3-03 数据手册

 浏览型号IPP100N06S3-03的Datasheet PDF文件第2页浏览型号IPP100N06S3-03的Datasheet PDF文件第3页浏览型号IPP100N06S3-03的Datasheet PDF文件第4页浏览型号IPP100N06S3-03的Datasheet PDF文件第5页浏览型号IPP100N06S3-03的Datasheet PDF文件第6页浏览型号IPP100N06S3-03的Datasheet PDF文件第7页 
IPB100N06S3-03  
IPI100N06S3-03, IPP100N06S3-03  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
Features  
55  
3.0  
100  
V
• N-channel - Enhancement mode  
R
DS(on),max (SMD version)  
m  
A
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
I D  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Green package (lead free)  
• Ultra low Rds(on)  
• 100% Avalanche tested  
• ESD Class 3 (HBM)  
EIA/JESD22-A114-B  
Type  
Package  
Ordering Code Marking  
IPB100N06S3-03  
IPI100N06S3-03  
IPP100N06S3-03  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
SP0000-87982  
SP0000-87992  
SP0000-87980  
3PN0603  
3PN0603  
3PN0603  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
100  
A
100  
400  
690  
V
GS=10 V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25 °C  
I D=50 A  
Avalanche energy, single pulse3)  
mJ  
Drain gate voltage2)  
Gate source voltage4)  
VDG  
55  
±20  
V
VGS  
V
Ptot  
T C=25 °C  
Power dissipation  
300  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2005-09-16  

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