Datasheet > IPP110N20N3 G

IPP110N20N3 G

更新时间： 2024-11-26 11:12:47

品牌	Logo	应用领域
英飞凌 - INFINEON		电机驱动转换器
页数	文件大小	规格书
11页	690K
描述
英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。

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IPP110N20N3 G 数据手册

IPB107N20N3 G IPP110N20N3 G

IPI110N20N3 G

OptiMOS^TM3 Power-Transistor

Product Summary

Features

V_DS

200

10.7

• N-channel, normal level

R_{DS(on),max (TO263)}

I_D

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Halogen-free according to IEC61249-2-21

• Ideal for high-frequency switching and synchronous rectification

Type

IPB107N20N3 G

IPP110N20N3 G

IPI110N20N3 G

Package

Marking

PG-TO263-3

107N20N

PG-TO220-3

110N20N

PG-TO262-3

110N20N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

352

I _D=80 A, R _GS=25 W

Avalanche energy, single pulse

Reverse diode dv /dt

560

kV/µs

dv /dt

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

300

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

°C

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.3

page 1

2011-07-14

12 3 4 5 6 7...11

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