Datasheet > IPP111N15N3 G

IPP111N15N3 G

更新时间： 2024-11-28 11:13:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	757K
描述
与次优竞品相比，150V OptiMOS™ R DS(on) 降低 40%，品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性，如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。

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IPP111N15N3 G 数据手册

IPB108N15N3 G IPP111N15N3 G

IPI111N15N3 G

OptiMOS^TM3 Power-Transistor

Product Summary

Features

V_DS

150

10.8

• N-channel, normal level

R_{DS(on),max (TO263)}

I_D

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant; Halogen free

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

•Halogen-free according to IEC61249-2-21

Type

IPB108N15N3 G

IPP111N15N3 G

IPI111N15N3 G

Package

Marking

PG-TO263

108N15N

PG-TO220-3

111N15N

PG-TO262-3

111N15N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

332

I _D=83 A, R _GS=25 W

Avalanche energy, single pulse

Gate source voltage

330

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

214

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.2

page 1

2017-02-23

12 3 4 5 6 7...11

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