Datasheet > IPP100N06S3L03AKSA1

IPP100N06S3L03AKSA1

更新时间： 2024-09-16 09:22:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	192K
描述
Power Field-Effect Transistor, 100A I(D), 55V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, TO-220, 3 PIN

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IPP100N06S3L03AKSA1 数据手册

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IPB100N06S3L-03

IPI100N06S3L-03, IPP100N06S3L-03

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

2.7

100

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPB100N06S3L-03

IPI100N06S3L-03

IPP100N06S3L-03

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

3PN06L03

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V_GS=10 V

T _C=100 °C,

100

_GS=10 V²⁾

Pulsed drain current²⁾

Avalanche energy, single pulse²⁾

I _D,pulse

E_AS

T _C=25 °C

I _D=50 A

400

2390

I _AS

Avalanche current, single pulse

100

Gate source voltage³⁾

V_GS

±16

P_tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.1

page 1

2007-11-07

12 3 4 5 6 7...9

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