Datasheet > IPP054NE8N

IPP054NE8N

更新时间： 2024-11-06 03:44:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	464K
描述
OptiMOS㈢2 Power-Transistor

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中文翻译

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数据手册

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IPP054NE8N 数据手册

IPB051NE8N G IPI05CNE8N G

IPP054NE8N G

OptiMOS^®2 Power-Transistor

Product Summary

Features

V _DS

5.1

100

• N-channel, normal level

R _{DS(on),max (TO 263)}

I _D

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

IPB051NE8N G

IPI05CNE8N G

IPP054NE8N G

Type

PG-TO263-3

051NE8N

PG-TO262-3

05CNE8N

PG-TO220-3

054NE8N

Package

Marking

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

100

400

826

T _C=100 °C

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

I _D=100 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=100 A, V _DS=68 V,

di /dt =100 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage ⁴⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

Rev. 1.04

page 1

2006-02-17

12 3 4 5 6 7...11

中文翻译

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