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IPI320N20N3G PDF预览

IPI320N20N3G

更新时间: 2024-02-27 03:28:09
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
11页 422K
描述
OptiMOSTM3 Power-Transistor Features N-channel, normal level

IPI320N20N3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.7雪崩能效等级(Eas):190 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):34 A最大漏极电流 (ID):34 A
最大漏源导通电阻:0.032 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):136 W
最大脉冲漏极电流 (IDM):136 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPI320N20N3G 数据手册

 浏览型号IPI320N20N3G的Datasheet PDF文件第2页浏览型号IPI320N20N3G的Datasheet PDF文件第3页浏览型号IPI320N20N3G的Datasheet PDF文件第4页浏览型号IPI320N20N3G的Datasheet PDF文件第5页浏览型号IPI320N20N3G的Datasheet PDF文件第6页浏览型号IPI320N20N3G的Datasheet PDF文件第7页 
IPB320N20N3 G IPP320N20N3 G  
IPI320N20N3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
V DS  
200  
32  
V
• N-channel, normal level  
R DS(on),max  
I D  
mΩ  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
34  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Halogen-free according to IEC61249-2-21  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPB320N20N3 G  
IPP320N20N3 G  
IPI320N20N3 G  
Package  
Marking  
PG-TO263-3  
320N20N  
PG-TO220-3  
320N20N  
PG-TO262-3  
320N20N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
34  
22  
A
Pulsed drain current2)  
I D,pulse  
E AS  
136  
I D=34 A, R GS=25 Ω  
Avalanche energy, single pulse  
Gate source voltage  
190  
mJ  
V
V GS  
±20  
P tot  
T C=25 °C  
Power dissipation  
136  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) See figure 3  
Rev. 2.2  
page 1  
2009-10-22  

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