5秒后页面跳转
IPI50R250CP PDF预览

IPI50R250CP

更新时间: 2024-10-01 11:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 275K
描述
CoolMOS Power Transistor

IPI50R250CP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.78Is Samacsys:N
雪崩能效等级(Eas):345 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):13 A
最大漏极电流 (ID):13 A最大漏源导通电阻:0.25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):114 W最大脉冲漏极电流 (IDM):31 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPI50R250CP 数据手册

 浏览型号IPI50R250CP的Datasheet PDF文件第2页浏览型号IPI50R250CP的Datasheet PDF文件第3页浏览型号IPI50R250CP的Datasheet PDF文件第4页浏览型号IPI50R250CP的Datasheet PDF文件第5页浏览型号IPI50R250CP的Datasheet PDF文件第6页浏览型号IPI50R250CP的Datasheet PDF文件第7页 
IPI50R250CP  
CoolMOS® Power Transistor  
Features  
Product Summary  
DS @Tjmax  
R DS(on),max  
Q g,typ  
V
550  
0.250  
27  
V
• Lowest figure-of-merit RON x Qg  
• Ultra low gate charge  
nC  
• Extreme dv/dt rated  
• High peak current capability  
• Pb-free lead plating; RoHS compliant  
• Quailfied according to JEDEC1) for target applications  
TO-262-3  
CoolMOS CP is designed for:  
• Hard & soft switching SMPS topologies  
• CCM PFC for ATX, Notebook adapter, PDP and LCD TV  
• PWM Stages for ATX, Notebook adapter, PDP and LCD TV  
Type  
Package  
Marking  
IPI50R250CP  
PG-TO262  
5R250P  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
13  
9
Continuous drain current  
A
Pulsed drain current2)  
31  
I D,pulse  
E AS  
I D=5.2 A, V DD=50 V  
I D=5.2 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
345  
0.52  
5.2  
mJ  
2),3)  
2),3)  
E AR  
I AR  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V
DS=0...400 V  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
114  
-55 ... 150  
60  
static  
AC (f>1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
Mounting torque  
°C  
M3 and M3.5 screws  
page 1  
Ncm  
Rev. 2.0  
2007-11-05  

IPI50R250CP 替代型号

型号 品牌 替代类型 描述 数据表
IPI50R299CP INFINEON

类似代替

CoolMOS Power Transistor
IPI50R199CP INFINEON

类似代替

CoolMOS Power Transistor

与IPI50R250CP相关器件

型号 品牌 获取价格 描述 数据表
IPI50R299CP INFINEON

获取价格

CoolMOS Power Transistor
IPI50R350CP INFINEON

获取价格

CoolMOSTM Power Transistor
IPI50R350CPXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Met
IPI50R380CE INFINEON

获取价格

500V CoolMOS CE Power Transistor
IPI50R399CP INFINEON

获取价格

CoolMOSTM Power Transistor
IPI510 ETC

获取价格

NPN-OUTPUT DC-INPUT OPTOCOUPLER
IPI530N15N3G INFINEON

获取价格

OptiMOS3 Power-Transistor
IPI530N15N3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Me
IPI600N25N3G INFINEON

获取价格

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPI600N25N3GAKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Met