Datasheet > IPI60R299CP

IPI60R299CP

更新时间： 2024-11-26 03:44:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	317K
描述
CoolMOS Power Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IPI60R299CP 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TO-262AA
包装说明：	IN-LINE, R-PSIP-T3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	1 week	风险等级：	5.79
Base Number Matches：	1

IPI60R299CP 数据手册

IPI60R299CP

CoolMOS^TMPower Transistor

Features

Product Summary

_DS@ T_j,max

R _DS(on),max

Q _g,typ

650

0.299

• Lowest figure-of-merit R_ONxQ_g

• Ultra low gate charge

Ω

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC¹⁾for target applications

PG-TO262

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

Hard switching SMPS topologies

Type

Package

Ordering Code

Marking

IPI60R299CP

PG-TO262

SP000103249

6R299P

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

290

I _D,pulse

E _AS

I _D=4.4 A, V _DD=50 V

Avalanche energy, single pulse

2),3)

E _AR

0.44

4.4

Avalanche energy, repetitive t _AR

I _AR

Avalanche current, repetitive t _AR

_DS=0...480 V

±20

MOSFET dv /dt ruggedness

dv /dt

V/ns

V _GS

Gate source voltage

static

±30

AC (f >1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

°C

Rev. 2.0

page 1

2006-04-04

12 3 4 5 6 7...10

中文翻译

下载PDF

IPI60R299CP 替代型号

型号	品牌	替代类型	描述	数据表
IPI60R280C6	INFINEON	类似代替	Metal Oxide Semiconductor Field Effect Transistor

与IPI60R299CP相关器件

型号	品牌	获取价格	描述	数据表
IPI60R299CPXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Me
IPI60R380C6	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
IPI60R385CP	INFINEON	获取价格	CoolMOS Power Transistor
IPI60R385CP_07	INFINEON	获取价格	CoolMOSTM Power Transistor
IPI60R520CP	INFINEON	获取价格	CoolMOS Power Transistor
IPI60R520CPAKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Me
IPI60R600CP	INFINEON	获取价格	CoolMOSTM Power Transistor
IPI65R099C6	INFINEON	获取价格	Power Field-Effect Transistor, 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IPI65R099C6	ROCHESTER	获取价格	650V, 0.099ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
IPI65R150CFDXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, M