是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | TO-262AA |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.7 |
雪崩能效等级(Eas): | 215 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 9 A | 最大漏极电流 (ID): | 9 A |
最大漏源导通电阻: | 0.399 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 83 W |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI510 | ETC |
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NPN-OUTPUT DC-INPUT OPTOCOUPLER | |
IPI530N15N3G | INFINEON |
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OptiMOS3 Power-Transistor | |
IPI530N15N3GXKSA1 | INFINEON |
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Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Me | |
IPI600N25N3G | INFINEON |
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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | |
IPI600N25N3GAKSA1 | INFINEON |
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Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Met | |
IPI60R099CP | INFINEON |
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CoolMOSTM Power Transistor | |
IPI60R099CP_08 | INFINEON |
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CoolMOS Power Transistor | |
IPI60R099CPA | INFINEON |
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CoolMOS Power Transistor | |
IPI60R099CPXKSA1 | INFINEON |
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Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Me | |
IPI60R125CP | INFINEON |
获取价格 |
CoolMOSTM Power Transistor |