是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-262AA |
包装说明: | GREEN, PLASTIC, TO-262, 3 PIN | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
雪崩能效等级(Eas): | 166 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 6.8 A |
最大漏源导通电阻: | 0.52 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 17 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IPI65R600C6 | INFINEON |
类似代替 |
650V CoolMOS C6 Power Transistor | |
IPI60R520CP | INFINEON |
类似代替 |
CoolMOS Power Transistor | |
SPI07N65C3 | INFINEON |
类似代替 |
Cool MOS⑩ Power Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI60R600CP | INFINEON |
获取价格 |
CoolMOSTM Power Transistor | |
IPI65R099C6 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IPI65R099C6 | ROCHESTER |
获取价格 |
650V, 0.099ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | |
IPI65R150CFDXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, M | |
IPI65R190C6 | INFINEON |
获取价格 |
650V CoolMOS C6 Power Transistor | |
IPI65R190C6XKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IPI65R190CFD | INFINEON |
获取价格 |
Metal Oxide Semiconduvtor Field Effect Transistor | |
IPI65R190CFDXKSA2 | INFINEON |
获取价格 |
Power Field-Effect Transistor, TO-262, I2PAK-3 | |
IPI65R190E6 | INFINEON |
获取价格 |
650V CoolMOS⢠E6 Power Transistor | |
IPI65R280C6 | INFINEON |
获取价格 |
650V CoolMOS C6 Power Transistor |