是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-262AA |
包装说明: | GREEN, PLASTIC, TO-262, 3 PIN | 针数: | 3 |
Reach Compliance Code: | compliant | Factory Lead Time: | 1 week |
风险等级: | 5.69 | 雪崩能效等级(Eas): | 418 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 20.2 A | 最大漏源导通电阻: | 0.19 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 59 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
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IPI60R299CPXKSA1 | INFINEON |
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Metal Oxide Semiconductor Field Effect Transistor | |
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CoolMOS Power Transistor |