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IPI600N25N3GAKSA1 PDF预览

IPI600N25N3GAKSA1

更新时间: 2024-10-01 20:08:27
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 633K
描述
Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

IPI600N25N3GAKSA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:18 weeks风险等级:2.24
雪崩能效等级(Eas):210 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (ID):25 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IPI600N25N3GAKSA1 数据手册

 浏览型号IPI600N25N3GAKSA1的Datasheet PDF文件第2页浏览型号IPI600N25N3GAKSA1的Datasheet PDF文件第3页浏览型号IPI600N25N3GAKSA1的Datasheet PDF文件第4页浏览型号IPI600N25N3GAKSA1的Datasheet PDF文件第5页浏览型号IPI600N25N3GAKSA1的Datasheet PDF文件第6页浏览型号IPI600N25N3GAKSA1的Datasheet PDF文件第7页 
IPB600N25N3 G IPP600N25N3 G  
IPI600N25N3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
VDS  
250  
60  
V
• N-channel, normal level  
RDS(on),max  
ID  
mW  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
25  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Halogen-free according to IEC61249-2-21  
• Ideal for high-frequency switching and synchronous rectification  
Type  
IPB600N25N3 G  
IPP600N25N3 G  
IPI600N25N3 G  
Package  
Marking  
PG-TO263-3  
600N25N  
PG-TO220-3  
600N25N  
PG-TO262-3  
600N25N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
25  
18  
A
Pulsed drain current2)  
I D,pulse  
E AS  
100  
210  
I D=25 A, R GS=25 W  
Avalanche energy, single pulse  
mJ  
Reverse diode dv /dt  
dv /dt  
10  
kV/µs  
V GS  
Gate source voltage  
±20  
V
P tot  
T C=25 °C  
Power dissipation  
136  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) See figure 3  
Rev. 2.3  
page 1  
2011-07-14  

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