Datasheet > IPI60R385CP_07

IPI60R385CP_07

更新时间： 2024-11-02 12:20:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	323K
描述
CoolMOSTM Power Transistor

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IPI60R385CP_07 数据手册

IPI60R385CP

CoolMOS^TMPower Transistor

Features

Product Summary

_DS@ T_j,max

R _DS(on),max

Q _g,typ

650

0.385

• Lowest figure-of-merit R_ONx Q_g

• Ultra low gate charge

Ω

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC¹⁾for target applications

PG-TO262

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching SMPS topologies

Type

Package

Ordering Code Marking

SP000103250 6R385P

IPI60R385CP

PG-TO262

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

9.0

5.7

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

I _D=3.4 A, V _DD=50 V

Avalanche energy, single pulse

Avalanche energy, repetitive t _AR

227

0.3

2),3)

E _AR

I _AR

Avalanche current, repetitive t _AR

MOSFET dv /dt ruggedness

Gate source voltage

_DS=0...480 V

dv /dt

V _GS

V/ns

±20

±30

static

AC (f >1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

°C

Rev. 2.1

page 1

2007-02-15

12 3 4 5 6 7...10

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