Datasheet > IPI60R199CP_08

IPI60R199CP_08

更新时间： 2024-11-26 11:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	301K
描述
CoolMOS Power Transistor

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中文翻译

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数据手册

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IPI60R199CP_08 数据手册

IPI60R199CP

CoolMOS^®Power Transistor

Features

Product Summary

V _DS@ T_j,max

R _DS(on),max

650

0.199

• Lowest figure-of-merit R_ONxQ_g

• Ultra low gate charge

Ω

Q _g,typ

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC¹⁾for target applications

PG-TO262

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching topologies, for Server and Telecom

Type

Package

Ordering Code

Marking

IPI60R199CP

PG-TO262

SP000103248

6R199P

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

I _D=6.6 A, V _DD=50 V

Avalanche energy, single pulse

436

2),3)

E _AR

I _AR

0.66

6.6

Avalanche energy, repetitive t _AR

Avalanche current, repetitive t _AR

_DS=0...480 V

±20

MOSFET dv /dt ruggedness

dv /dt

V/ns

V _GS

Gate source voltage

static

±30

AC (f >1 Hz)

T _C=25 °C

P _tot

139

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

°C

Rev. 2.1

page 1

2008-02-19

12 3 4 5 6 7...10

中文翻译

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