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IPI60R099CP PDF预览

IPI60R099CP

更新时间: 2024-10-01 11:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 308K
描述
CoolMOSTM Power Transistor

IPI60R099CP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:5.63雪崩能效等级(Eas):800 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):31 A最大漏源导通电阻:0.099 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):93 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPI60R099CP 数据手册

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IPI60R099CP  
CoolMOSTM Power Transistor  
Features  
Product Summary  
DS @ Tj,max  
R DS(on),max  
Q g,typ  
V
650  
0.099  
60  
V
• Worldwide best R ds,on in TO220  
• Ultra low gate charge  
nC  
• Extreme dv/dt rated  
• High peak current capability  
• Qualified according to JEDEC1) for target applications  
PG-TO262  
• Pb-free lead plating; RoHS compliant  
CoolMOS CP is designed for:  
• Hard switching SMPS topologies for Server and Telecon  
Type  
Package  
Marking  
IPI60R099CP  
PG-TO262  
6R099  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
31  
19  
Continuous drain current  
A
Pulsed drain current2)  
93  
I D,pulse  
E AS  
I D=11 A, V DD=50 V  
I D=11 A, V DD=50 V  
Avalanche energy, single pulse  
Avalanche energy, repetitive t AR  
800  
1.2  
mJ  
2),3)  
2),3)  
E AR  
I AR  
11  
A
Avalanche current, repetitive t AR  
MOSFET dv /dt ruggedness  
Gate source voltage  
V
DS=0...480 V  
50  
dv /dt  
V GS  
V/ns  
V
±20  
±30  
255  
-55 ... 150  
static  
AC (f >1 Hz)  
T C=25 °C  
P tot  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
°C  
Rev. 1.0  
page 1  
2007-01-25  

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