是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.66 |
雪崩能效等级(Eas): | 97 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.0079 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 180 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI45N06S4L08AKSA3 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Me |
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IPI45P03P4L-11 | INFINEON |
获取价格 |
OptiMOS-P2 Power-Transistor |
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IPI45P03P4L11AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 45A I(D), 30V, 0.0111ohm, 1-Element, P-Channel, Silicon, Me |
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IPI47N10S-33 | INFINEON |
获取价格 |
SIPMOS Power-Transistor Feature N-Channel Enhancement mode |
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IPI47N10SL-26 | INFINEON |
获取价格 |
SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level |
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IPI47N10SL26AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met |
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IPI506 | ETC |
获取价格 |
NPN-OUTPUT DC-INPUT OPTOCOUPLER |
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IPI507 | ETC |
获取价格 |
NPN-OUTPUT DC-INPUT OPTOCOUPLER |
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IPI508 | ETC |
获取价格 |
NPN-OUTPUT DC-INPUT OPTOCOUPLER |
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IPI508P | ETC |
获取价格 |
NPN-OUTPUT DC-INPUT OPTOCOUPLER |
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