生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | 雪崩能效等级(Eas): | 29 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 80 A | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI50N10S3L-16 | INFINEON |
获取价格 |
OptiMOS-T Power-Transistor |
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IPI50N10S3L16AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 100V, 0.0209ohm, 1-Element, N-Channel, Silicon, M |
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IPI50N12S3L-15 | INFINEON |
获取价格 |
Power Field-Effect Transistor |
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IPI50N12S3L15AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 120V, 0.0209ohm, 1-Element, N-Channel, Silicon, M |
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IPI50R140CP | INFINEON |
获取价格 |
CoolMOS Power Transistor |
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IPI50R199CP | INFINEON |
获取价格 |
CoolMOS Power Transistor |
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IPI50R250CP | INFINEON |
获取价格 |
CoolMOS Power Transistor |
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IPI50R299CP | INFINEON |
获取价格 |
CoolMOS Power Transistor |
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IPI50R350CP | INFINEON |
获取价格 |
CoolMOSTM Power Transistor |
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IPI50R350CPXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Met |
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