IPI50R140CP

更新时间： 2024-10-01 12:20:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
10页	279K
描述
CoolMOS Power Transistor

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中文翻译

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技术参数
数据手册

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IPI50R140CP 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.8	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IPI50R140CP 数据手册

IPI50R140CP

CoolMOS^®Power Transistor

Features

Product Summary

_DS@T_jmax

R _DS(on),max

Q _g,typ

550

0.140

• Worldwide best R _{DS ,on}in TO220

• Lowest figure of merit R_ONx Q_g

Ω

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

TO-262-3-1

• Pb-free lead plating; RoHS compliant

• Quailfied according to JEDEC¹⁾for target applications

CoolMOS CP is designed for:

• Hard & soft switching SMPS topologies

• CCM PFC for ATX, Notebookadapter & PDP and LCD TV

• PWM Stages for Server, Adapter

Type

Package

Marking

IPP50R140CP

PG-TO220

5R140P

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

I _D=9.3 A, V _DD=50 V

Avalanche energy, single pulse

Avalanche energy, repetitive t _AR

616

0.93

9.3

2),3)

E _AR

I _AR

Avalanche current, repetitive t _AR

MOSFET dv /dt ruggedness

Gate source voltage

_DS=0...400 V

dv /dt

V _GS

V/ns

±20

±30

192

-55 ... 150

static

AC (f >1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _j, T _stg

Operating and storage temperature

Mounting torque

°C

M3 and M3.5 screws

page 1

Ncm

Rev. 2.0

2007-11-05

12 3 4 5 6 7...10

中文翻译

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