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IPI45N06S4L08AKSA3 PDF预览

IPI45N06S4L08AKSA3

更新时间: 2024-01-24 02:03:06
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲晶体管
页数 文件大小 规格书
9页 172K
描述
Power Field-Effect Transistor, 45A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

IPI45N06S4L08AKSA3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.82
雪崩能效等级(Eas):97 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):45 A最大漏源导通电阻:0.0082 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):180 A
参考标准:AEC-Q101表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

IPI45N06S4L08AKSA3 数据手册

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IPB45N06S4L-08  
IPI45N06S4L-08, IPP45N06S4L-08  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
60  
7.9  
45  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB45N06S4L-08  
IPI45N06S4L-08  
IPP45N06S4L-08  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
4N06L08  
4N06L08  
4N06L08  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
45  
45  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
180  
97  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=22.5A  
mJ  
A
I AS  
-
45  
VGS  
-
±16  
71  
V
Ptot  
T C=25°C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
Rev. 1.0  
page 1  
2009-03-24  

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