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IPI45N06S4-09 PDF预览

IPI45N06S4-09

更新时间: 2024-02-16 02:49:34
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
9页 156K
描述
OptiMOS-T2 Power-Transistor

IPI45N06S4-09 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.65Is Samacsys:N
雪崩能效等级(Eas):97 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):45 A
最大漏极电流 (ID):45 A最大漏源导通电阻:0.0094 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):71 W最大脉冲漏极电流 (IDM):180 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPI45N06S4-09 数据手册

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IPB45N06S4-09  
IPI45N06S4-09, IPP45N06S4-09  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
60  
9.2  
45  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
• AEC qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
4N0609  
4N0609  
4N0609  
IPB45N06S4-09  
IPI45N06S4-09  
IPP45N06S4-09  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25°C, VGS=10V  
45  
A
T C=100°C, VGS=10V2)  
45  
Pulsed drain current2)  
I D,pulse  
EAS  
I AS  
T C=25°C  
180  
97  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=22.5A  
mJ  
A
-
45  
VGS  
Ptot  
-
±20  
V
T C=25°C  
Power dissipation  
71  
W
°C  
T j, T stg  
-
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
Rev. 1.0  
page 1  
2009-03-24  

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