生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.66 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 95 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 45 A |
最大漏源导通电阻: | 0.0134 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 180 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI45N06S4-09 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPI45N06S4L-08 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPI45N06S4L08AKSA1 | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Me | |
IPI45N06S4L08AKSA3 | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Me | |
IPI45P03P4L-11 | INFINEON |
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OptiMOS-P2 Power-Transistor | |
IPI45P03P4L11AKSA1 | INFINEON |
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Power Field-Effect Transistor, 45A I(D), 30V, 0.0111ohm, 1-Element, P-Channel, Silicon, Me | |
IPI47N10S-33 | INFINEON |
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SIPMOS Power-Transistor Feature N-Channel Enhancement mode | |
IPI47N10SL-26 | INFINEON |
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SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level | |
IPI47N10SL26AKSA1 | INFINEON |
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Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met | |
IPI506 | ETC |
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NPN-OUTPUT DC-INPUT OPTOCOUPLER |