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IPI45N06S3L-13 PDF预览

IPI45N06S3L-13

更新时间: 2024-01-19 05:21:16
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 188K
描述
OptiMOS-T2 Power-Transistor

IPI45N06S3L-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-262AA
包装说明:GREEN, PLASTIC, TO-262, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.28
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):95 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):45 A最大漏源导通电阻:0.0134 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):180 A
认证状态:COMMERCIAL表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

IPI45N06S3L-13 数据手册

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IPB45N06S3L-13  
IPI45N06S3L-13, IPP45N06S3L-13  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
Features  
55  
13.1  
45  
V
• N-channel - Logic Level - Enhancement mode  
R
DS(on),max (SMD version)  
m  
A
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
Green package (RoHS compliant)  
• Ultra low Rds(on)  
I D  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB45N06S3L-13  
IPI45N06S3L-13  
IPP45N06S3L-13  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
3N06L13  
3N06L13  
3N06L13  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
45  
37  
A
V
GS=10 V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25 °C  
I D=27.5 A  
180  
95  
Avalanche energy, single pulse  
mJ  
V
Gate source voltage3)  
VGS  
±16  
65  
Ptot  
T C=25 °C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
°C  
Rev. 2.2  
page 1  
2007-09-06  

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