Datasheet > IPD60R180P7

IPD60R180P7

更新时间： 2024-02-23 09:10:51

品牌	Logo	应用领域
英飞凌 - INFINEON		栅栅极
页数	文件大小	规格书
14页	1152K
描述
600V CoolMOS? P7 超结 (SJ) MOSFET 是 600V CoolMOS? P6 系列的后续产品。该产品继续在设计过程中的高效率与易用性之间保持平衡。第 7 代 CoolMOS? 平台具有同类中较为出色的R?onxA 和固有低栅极电荷 (Q?G)，确保高效率。

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IPD60R180P7 数据手册

600VꢀCoolMOSªꢀP7ꢀPowerꢀDevice

IPD60R180P7

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

E_AR

I_AS

0.28

4.0

150

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, single pulse

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

I_D=4.0A; V_DD=50V; see table 10

dv/dt

V_GS

P_tot

T_stg

T_j

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

°C

T_C=25°C

Storage temperature

-55

Operating junction temperature

Mounting torque

Ncm -

Continuous diode forward current

Diode pulse current²⁾

I_S

T_C=25°C

I_S,pulse

T_C=25°C

V_DS=0...400V,ꢀI_SD<=18A,ꢀT_j=25°Cꢀꢀꢀꢀꢀ

see table 8

Reverse diode dv/dt³⁾

dv/dt

V/ns

V_DS=0...400V,ꢀI_SD<=18A,ꢀT_j=25°Cꢀꢀꢀꢀꢀ

see table 8

Maximum diode commutation speed

Insulation withstand voltage

di_F/dt

900

n.a.

A/µs

V_ISO

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_j,max. Maximum Duty Cycle D = 0.50

²⁾Pulse width t_plimited by T_j,max

³⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.5,ꢀꢀ2022-01-25

1 234 5 6 7...14

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