Datasheet > IPD60R180P7_V01

IPD60R180P7_V01

更新时间： 2022-02-26 13:06:34

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	328K
描述
isc N-Channel MOSFET Transistor

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IPD60R180P7_V01 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IPD60R180P7，IIPD60R180P7

·FEATURES

·Static drain-source on-resistance:

RDS(on)≤0.18Ω

·Enhancement mode:

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·Fast switching

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

P_D

℃

150

T_j

-40~150

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

Rth(j-c)

PARAMETER

MAX

UNIT

℃/W

Channel-to-case thermal resistance

1.74

Channel-to-ambient thermal resistance

Rth(j-a)

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