品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | PC光电二极管 | |
页数 | 文件大小 | 规格书 |
14页 | 611K | |
描述 | ||
The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R280PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPD60R280PFD7S in a TO-252 DPAK package features RDS(on) of 280mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill-of-material (BOM) the customer. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD60R2K0C6 | INFINEON |
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600V CoolMOS C6 Power Transistor | |
IPD60R2K0C6ATMA1 | INFINEON |
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Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi | |
IPD60R2K0C6BTMA1 | INFINEON |
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Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semi | |
IPD60R2K0PFD7S | INFINEON |
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The 600V CoolMOS? PFD7 superjunction MOSFET (IPD60R2K0PFD7S) complements the CoolMOS? 7 of | |
IPD60R2K1CE | INFINEON |
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600V CoolMOSª CE Power Transistor | |
IPD60R2K1CE_16 | INFINEON |
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600V CoolMOSª CE Power Transistor | |
IPD60R2K1CEAUMA1 | INFINEON |
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Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IPD60R360CFD7 | INFINEON |
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The 600V CoolMOS™ CFD7 is Infineon’s latest h | |
IPD60R360P7 | ISC |
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N-Channel MOSFET Transistor | |
IPD60R360P7 | INFINEON |
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600V CoolMOS? P7 超结 (SJ) MOSFET 是 600V CoolMO |