IPD60R1K0CE,ꢀIPU60R1K0CE
MOSFET
DPAK
IPAK
600VꢀCoolMOSªꢀCEꢀPowerꢀTransistor
tab
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀCEꢀisꢀa
2
1
1
2
3
3
price-performanceꢀoptimizedꢀplatformꢀenablingꢀtoꢀtargetꢀcostꢀsensitive
applicationsꢀinꢀConsumerꢀandꢀLightingꢀmarketsꢀbyꢀstillꢀmeetingꢀhighest
efficiencyꢀstandards.ꢀTheꢀnewꢀseriesꢀprovidesꢀallꢀbenefitsꢀofꢀaꢀfast
switchingꢀSuperjunctionꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuseꢀand
offeringꢀtheꢀbestꢀcostꢀdownꢀperformanceꢀratioꢀavailableꢀonꢀtheꢀmarket.
Drain
Pin 2, Tab
Gate
Pin 1
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀuse/drive
Source
Pin 3
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀstandardꢀgradeꢀapplications
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTVꢀandꢀindoorꢀlighting.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Id.
Value
650
1000
6.8
Unit
V
mΩ
A
Qg.typ
13
nC
A
ID,pulse
12
Eoss@400V
1.3
µJ
Typeꢀ/ꢀOrderingꢀCode
IPD60R1K0CE
Package
Marking
RelatedꢀLinks
see Appendix A
PG-TO 252
PG-TO 251
60S1K0CE
IPU60R1K0CE
Final Data Sheet
1
2016-03-31