Datasheet > IPD60R210PFD7S

IPD60R210PFD7S

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		PC 光电二极管
页数	文件大小	规格书
14页	635K
描述
The 600V CoolMOS? PFD7 superjunction MOSFET (IPD60R210PFD7S) complements the CoolMOS? 7 offering for consumer applications. The IPD60R210PFD7S in a TO-252 DPAK package features RDS(on)?of 210mOhm leading to low switching losses.?The products come with an integrated fast body diode ensuring a robust device. The?fast body diode and Infineon's industry-leading SMD package?reduce PCB space?and in turn the bill-of-material (BOM) the customer.

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IPD60R210PFD7S 数据手册

IPD60R210PFD7S

MOSFET

DPAK

600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.

tab

TheꢀlatestꢀCoolMOS™ꢀPFD7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtarget

costꢀsensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,

motorꢀdrive,ꢀlighting,ꢀetc.

TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction

MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof

theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency

standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing

towardsꢀveryꢀslimꢀdesigns.

Drain

Pin 2, Tab

Features

•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀR_DS(on)*Q_gꢀandꢀR_DS(on)*E_oss

•ꢀLowꢀswitchingꢀlossesꢀE_oss,ꢀexcellentꢀthermalꢀbehavior

•ꢀFastꢀbodyꢀdiode

Gate

Pin 1

•ꢀWideꢀrangeꢀportfolioꢀofꢀR_DS(on)ꢀandꢀpackageꢀvariations

Source

Pin 3

*1: Internal body diode

Benefits

•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors

•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies

•ꢀExcellentꢀcommutationꢀruggedness

•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀandꢀoptimizeꢀtheꢀdesign

Potentialꢀapplications

RecommendedꢀforꢀZVSꢀtopologiesꢀusedꢀinꢀhighꢀdensityꢀchargers,

adapters,ꢀlightingꢀandꢀmotorꢀdrivesꢀapplications,ꢀetc.

Productꢀvalidation

QualifiedꢀaccordingꢀtoꢀJEDECꢀStandard

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

650

210

Unit

mΩ

Q_g,typ

I_D,pulse

E_oss@ 400V

Body diode di_F/dt

ESD Class (HBM)

2.6

µJ

1300

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPD60R210PFD7S

PG-TO 252-3

60S210D7

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2019-04-09

12 3 4 5 6 7...14

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与IPD60R210PFD7S相关器件

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