Datasheet > IPD60R210CFD7

IPD60R210CFD7

更新时间： 2024-03-25 22:01:47

品牌	Logo	应用领域
英飞凌 - INFINEON		栅高压二极管栅极
页数	文件大小	规格书
14页	996K
描述
600V CoolMOS? CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术，补全了 CoolMOS? 7 系列。该 CoolMOS? CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外，其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多，且具有市场上最短的反向恢复时间(trr)。

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中文翻译

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IPD60R210CFD7 数据手册

IPD60R210CFD7

MOSFET

DPAK

600VꢀCoolMOSªꢀCFD7ꢀPowerꢀDevice

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀlatestꢀCoolMOS™ꢀCFD7ꢀisꢀthe

successorꢀtoꢀtheꢀCoolMOS™ꢀCFD2ꢀseriesꢀandꢀisꢀanꢀoptimizedꢀplatform

tailoredꢀtoꢀtargetꢀsoftꢀswitchingꢀapplicationsꢀsuchꢀasꢀphase-shiftꢀfull-bridge

(ZVS)ꢀandꢀLLC.ꢀResultingꢀfromꢀreducedꢀgateꢀchargeꢀ(Q_g),ꢀbest-in-class

reverseꢀrecoveryꢀchargeꢀ(Q_rr)ꢀandꢀimprovedꢀturnꢀoffꢀbehaviorꢀCoolMOS™

CFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonantꢀtopologies.ꢀAsꢀpartꢀofꢀInfineon’s

fastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblendsꢀallꢀadvantagesꢀof

aꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhardꢀcommutation

robustness,ꢀwithoutꢀsacrificingꢀeasyꢀimplementationꢀinꢀtheꢀdesign-in

process.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeetsꢀhighestꢀefficiencyꢀand

reliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhighꢀpowerꢀdensity

solutions.ꢀAltogether,ꢀCoolMOS™ꢀCFD7ꢀmakesꢀresonantꢀswitching

topologiesꢀmoreꢀefficient,ꢀmoreꢀreliable,ꢀlighterꢀandꢀcooler.

tab

Drain

Pin 2, Tab

Gate

Pin 1

Features

•ꢀUltra-fastꢀbodyꢀdiode

Source

Pin 3

*1: Internal body diode

•ꢀLowꢀgateꢀcharge

•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀImprovedꢀMOSFETꢀreverseꢀdiodeꢀdv/dtꢀandꢀdi_F/dtꢀruggedness

•ꢀLowestꢀFOMꢀR_DS(on)*Q_gꢀandꢀR_DS(on)*E_oss

•ꢀBest-in-classꢀR_DS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages

Benefits

•ꢀExcellentꢀhardꢀcommutationꢀruggedness

•ꢀHighestꢀreliabilityꢀforꢀresonantꢀtopologies

•ꢀHighestꢀefficiencyꢀwithꢀoutstandingꢀease-of-useꢀ/ꢀperformanceꢀtradeoff

•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions

Potentialꢀapplications

SuiteableꢀforꢀSoftꢀSwitchingꢀtopologies

Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,

Telecom,ꢀEVꢀCharging

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

650

210

Unit

mΩ

Q_g,typ

I_D,pulse

E_oss@ 400V

Body diode di_F/dt

2.6

µJ

1300

A/µs

Typeꢀ/ꢀOrderingꢀCode

IPD60R210CFD7

Package

Marking

RelatedꢀLinks

PG-TO252-3

60R210F7

see Appendix A

Final Data Sheet

Rev.ꢀ2.2,ꢀꢀ2020-05-26

12 3 4 5 6 7...14

中文翻译

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与IPD60R210CFD7相关器件

型号	品牌	获取价格	描述	数据表
IPD60R210PFD7S	INFINEON	获取价格	The 600V CoolMOS? PFD7 superjunction MOSFET (IPD60R210PFD7S) complements the CoolMOS? 7 of
IPD60R280CFD7	INFINEON	获取价格	600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superj
IPD60R280P7	INFINEON	获取价格	600V CoolMOS™ P7 超结 (SJ) MOSFET 是 600V CoolMO
IPD60R280P7S	INFINEON	获取价格	600V CoolMOS™ P7 超结 (SJ) MOSFET 是 600V CoolMO
IPD60R280P7SAUMA1	INFINEON	获取价格	Power Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IPD60R280PFD7S	INFINEON	获取价格	The 600V CoolMOS™ PFD7 superjunction MOSFET (
IPD60R2K0C6	INFINEON	获取价格	600V CoolMOS C6 Power Transistor
IPD60R2K0C6ATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
IPD60R2K0C6BTMA1	INFINEON	获取价格	Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semi
IPD60R2K0PFD7S	INFINEON	获取价格	The 600V CoolMOS? PFD7 superjunction MOSFET (IPD60R2K0PFD7S) complements the CoolMOS? 7 of

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