是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 18 weeks |
风险等级: | 1.61 | 雪崩能效等级(Eas): | 38 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏源导通电阻: | 0.28 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 36 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD60R280PFD7S | INFINEON |
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The 600V CoolMOS™ PFD7 superjunction MOSFET ( | |
IPD60R2K0C6 | INFINEON |
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600V CoolMOS C6 Power Transistor | |
IPD60R2K0C6ATMA1 | INFINEON |
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Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi | |
IPD60R2K0C6BTMA1 | INFINEON |
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Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semi | |
IPD60R2K0PFD7S | INFINEON |
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The 600V CoolMOS? PFD7 superjunction MOSFET (IPD60R2K0PFD7S) complements the CoolMOS? 7 of | |
IPD60R2K1CE | INFINEON |
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600V CoolMOSª CE Power Transistor | |
IPD60R2K1CE_16 | INFINEON |
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600V CoolMOSª CE Power Transistor | |
IPD60R2K1CEAUMA1 | INFINEON |
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Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IPD60R360CFD7 | INFINEON |
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The 600V CoolMOS™ CFD7 is Infineon’s latest h | |
IPD60R360P7 | ISC |
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N-Channel MOSFET Transistor |