Datasheet > IPD60R360CFD7

IPD60R360CFD7

更新时间： 2023-09-03 20:38:54

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1004K
描述
The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

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IPD60R360CFD7 数据手册

IPD60R360CFD7

MOSFET

DPAK

600VꢀCoolMOSªꢀCFD7ꢀPowerꢀDevice

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀlatestꢀCoolMOS™ꢀCFD7ꢀisꢀthe

successorꢀtoꢀtheꢀCoolMOS™ꢀCFD2ꢀseriesꢀandꢀisꢀanꢀoptimizedꢀplatform

tailoredꢀtoꢀtargetꢀsoftꢀswitchingꢀapplicationsꢀsuchꢀasꢀphase-shiftꢀfull-bridge

(ZVS)ꢀandꢀLLC.ꢀResultingꢀfromꢀreducedꢀgateꢀchargeꢀ(Q_g),ꢀbest-in-class

reverseꢀrecoveryꢀchargeꢀ(Q_rr)ꢀandꢀimprovedꢀturnꢀoffꢀbehaviorꢀCoolMOS™

CFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonantꢀtopologies.ꢀAsꢀpartꢀofꢀInfineon’s

fastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblendsꢀallꢀadvantagesꢀof

aꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhardꢀcommutation

robustness,ꢀwithoutꢀsacrificingꢀeasyꢀimplementationꢀinꢀtheꢀdesign-in

process.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeetsꢀhighestꢀefficiencyꢀand

reliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhighꢀpowerꢀdensity

solutions.ꢀAltogether,ꢀCoolMOS™ꢀCFD7ꢀmakesꢀresonantꢀswitching

topologiesꢀmoreꢀefficient,ꢀmoreꢀreliable,ꢀlighterꢀandꢀcooler.

tab

Drain

Pin 2, Tab

Gate

Pin 1

Features

•ꢀUltra-fastꢀbodyꢀdiode

Source

Pin 3

*1: Internal body diode

•ꢀLowꢀgateꢀcharge

•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀImprovedꢀMOSFETꢀreverseꢀdiodeꢀdv/dtꢀandꢀdi_F/dtꢀruggedness

•ꢀLowestꢀFOMꢀR_DS(on)*Q_gꢀandꢀR_DS(on)*E_oss

•ꢀBest-in-classꢀR_DS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages

Benefits

•ꢀExcellentꢀhardꢀcommutationꢀruggedness

•ꢀHighestꢀreliabilityꢀforꢀresonantꢀtopologies

•ꢀHighestꢀefficiencyꢀwithꢀoutstandingꢀease-of-useꢀ/ꢀperformanceꢀtradeoff

•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions

Potentialꢀapplications

SuiteableꢀforꢀSoftꢀSwitchingꢀtopologies

Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,

Telecom,ꢀEVꢀCharging

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

650

360

Unit

mΩ

Q_g,typ

I_D,pulse

E_oss@ 400V

Body diode di_F/dt

1.6

µJ

1300

A/µs

Typeꢀ/ꢀOrderingꢀCode

IPD60R360CFD7

Package

Marking

RelatedꢀLinks

PG-TO252-3

60R360F7

see Appendix A

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2020-05-27

12 3 4 5 6 7...14

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