Datasheet > IPD60R360P7S

IPD60R360P7S

更新时间： 2024-11-21 01:18:03

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	335K
描述
N-Channel MOSFET Transistor

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数据手册

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IPD60R360P7S 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IPD60R360P7,IIPD60R360P7

·FEATURES

·Static drain-source on-resistance:

RDS(on)≤0.36Ω

·Enhancement mode:

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·Suitable for hard and soft switching

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

P_D

℃

150

T_j

-40~150

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

Rth(j-c)

PARAMETER

MAX

UNIT

℃/W

Channel-to-case thermal resistance

3.04

Channel-to-ambient thermal resistance

Rth(j-a)

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

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