是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.24 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPD530N15N3 G | INFINEON |
获取价格 |
与次优竞品相比,150V OptiMOS? R DS(on) 降低 40%,品质因数 (F | |
IPD530N15N3G | INFINEON |
获取价格 |
OptiMOS3 Power-Transistor | |
IPD530N15N3GATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Me | |
IPD530N15N3GBTMA1 | INFINEON |
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Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Me | |
IPD5N25S3-430 | INFINEON |
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Power Field-Effect Transistor, 5A I(D), 250V, 0.43ohm, 1-Element, N-Channel, Silicon, Meta | |
IPD600N25N3 G | INFINEON |
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英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术,完全适合在 48V 系统、直 | |
IPD600N25N3G | INFINEON |
获取价格 |
OptiMOSTM3 Power-Transistor | |
IPD600N25N3GATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Met | |
IPD600N25N3GBTMA1 | INFINEON |
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Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Met | |
IPD60N10S4-12 | INFINEON |
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? ? ? 仿真/SPICE 型号 |