Datasheet > IPD60R145CFD7ATMA1

IPD60R145CFD7ATMA1

更新时间： 2024-02-15 05:41:08

品牌	Logo	应用领域
英飞凌 - INFINEON		ATM 异步传输模式 PC 光电二极管
页数	文件大小	规格书
2页	229K
描述
Power Field-Effect Transistor,

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技术参数
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IPD60R145CFD7ATMA1 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
Factory Lead Time：	18 weeks	风险等级：	1.71
Samacsys Confidence：	4	Samacsys Status：	Released
Schematic Symbol：	https://componentsearchengine.com/symbol.php?partID=1503270	PCB Footprint：	https://componentsearchengine.com/footprint.php?partID=1503270
Samacsys PartID：	1503270	Samacsys Image：	https://componentsearchengine.com/Images/9/IPD60R145CFD7ATMA1.jpg
Samacsys Thumbnail Image：	https://componentsearchengine.com/Thumbnails/1/IPD60R145CFD7ATMA1.jpg	Samacsys Pin Count：	3
Samacsys Part Category：	MOSFET (N-Channel)	Samacsys Package Category：	Other
Samacsys Footprint Name：	IPD60R145CFD7ATMA1-1	Samacsys Released Date：	2019-04-12 15:59:05
Is Samacsys：	N	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IPD60R145CFD7ATMA1 数据手册

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Product Brief

600 V CoolMOS™ CFD7 SJ MOSFET

Infineon’s answer to resonant high power topologies

The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET tech-

nology with integrated fast body diode, completing the CoolMOS™ 7 series. It is the ideal

Key features

Ultra-fast body diode

Best-in-class reverse recovery

charge (Q_rr)

›

choice for resonant topologies in high power SMPS applications, such as server, telecom

and EV charging stations.

Improved reverse diode dv/dt and

dif/dt ruggedness

Lowest FOM R_DS(on)x Q_gand E_oss

Best-in-class R_DS(on)/package

combinations

›

The new CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 family. CoolMOS™ CFD7

comes with reduced gate charge (Q_g), improved turn-oﬀ behavior and a reverse recovery

charge (Q_rr) of up to 69 percent lower compared to the competition, as well as the lowest

reverse recovery time (t_rr) in the market. Due to these features CoolMOS™ CFD7 oﬀers

highest eﬀiciency and best-in-class reliability in soꢀ switching topologies such as LLC and

ZVS phase-shiꢀ full-bridge. In addition, CoolMOS™ CFD7 enables higher power density

›

thanks to its optimized R_DS(on)

Key benefits

All together, this latest fast body diode series brings clear benefits compared to competitor

oﬀerings by combining the advantages of a fast switching technology with superior commuta-

tion ruggedness without sacrificing easy implementation in the design-in process.

Best-in-class hard commutation

ruggedness

›

Highest reliability for resonant

topologies

Highest eﬀiciency with outstanding

ease-of-use/performance trade-oﬀ

Enabling increased power density

solutions

›

Q_rrcomparison of 170 mΩ CFD vs. 190 mΩ range competition*

1200

1000

-69 %

800

World‘s best Q_rrgot even better!

600

-32 %

400

200

Comp. C

Comp. A

Comp. D

Comp. B

CFD2

CFD7

*Comparison based on datasheet values

www.infineon.com/cfd7

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