Datasheet > IPD60N10S4L-12

IPD60N10S4L-12

更新时间： 2023-09-03 20:38:32

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	130K
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IPD60N10S4L-12 数据手册

IPD60N10S4L-12

OptiMOS^TM-T2 Power-Transistor

Product Summary

V _DS

100

R _DS(on),max

I _D

Features

• N-channel - Enhancement mode

PG-TO252-3-313

• AEC qualified

TAB

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPD60N10S4L-12

PG-TO252-3-313 4N10L12

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25°C, V _GS=10V

Continuous drain current

T _C=100°C, V _GS=10V¹⁾

Pulsed drain current¹⁾

I _D,pulse

E _AS

I _AS

T _C=25°C

240

120

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

Gate source voltage

I _D=30A

V _GS

P _tot

+/-16

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2011-11-30

12 3 4 5 6 7...9

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