IPD088N04LG

更新时间： 2024-11-22 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	232K
描述
OptiMOS3 Power-Transistor

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中文翻译

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数据手册

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IPD088N04LG 数据手册

Type

IPD088N04L G

OptiMOS^®3 Power-Transistor

Product Summary

Features

V _DS

8.8

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

R _DS(on),max

I _D

mΩ

• N-channel, logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 100% Avalanche tested

• Pb-free plating; RoHS compliant

Type

IPD088N04L G

• Pb-free plating; RoHS compliant

Package

Marking

PG-TO252-3

088N04L

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

Continuous drain current

_GS=10 V, T _C=100 °C

_GS=4.5 V, T _C=25 °C

_GS=4.5 V,

T _C=100 °C

Pulsed drain current²⁾

I _D,pulse

I _AS

T _C=25 °C

350

Avalanche current, single pulse³⁾

Avalanche energy, single pulse

Gate source voltage

T _C=25 °C

E _AS

V _GS

I _D=50 A, R _GS=25 Ω

±20

¹⁾J-STD20 and JESD22

Rev. 1.0

page 1

2007-12-06

12 3 4 5 6 7...9

中文翻译

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