Datasheet > IPD100N04S4L-02

IPD100N04S4L-02

更新时间： 2024-11-19 11:15:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	232K
描述
车规级MOSFET

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中文翻译

获取价格

技术参数
数据手册

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IPD100N04S4L-02 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.74	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IPD100N04S4L-02 数据手册

IPD100N04S4L-02

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

1.9

100

R_DS(on),max

I_D

Features

• OptiMOS^TM- power MOSFET for automotive applications

PG-TO252-3-313

• N-channel - Enhancement mode - Logic Level

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPD100N04S4L-02

PG-TO252-3-313

4N04L02

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V _GS=10V

100

T _C=100°C, V _GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25°C

400

440

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=50A

I _AS

100

V _GS

+20/-16

150

P _tot

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

Rev. 1.0

page 1

2015-05-06

12 3 4 5 6 7...9

中文翻译

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