Datasheet > IPD088N06N3G

IPD088N06N3G

更新时间： 2024-10-30 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	305K
描述
OptiMOS(TM)3 Power-Transistor

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数据手册
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IPD088N06N3G 数据手册

Type

IPD088N06N3 G

OptiMOS^(TM)3 Power-Transistor

Product Summary

Features

V _DS

8.8

• Ideal for high frequency switching and sync. rec.

• Optimized technology for DC/DC converters

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R_DS(on)

R _DS(on),max

I _D

mΩ

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target applications

Type

IPD088N06N3 G

Package

Marking

PG-TO252-3

088N06N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

200

Avalanche energy, single pulse⁴⁾

I _D=50 A, R _GS=25 Ω

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

-55 ... 175

55/175/56

IEC climatic category; DIN IEC 68-1

¹⁾J-STD20 and JESD22

²⁾Current is limited by bondwire; with anR _thJC=2.1 K/W the chip is able to carry 67 A.

³⁾See figure 3 for more detailed information

⁴⁾See figure 13 for more detailed information

Rev. 2.0

page 1

2008-11-26

12 3 4 5 6 7...9

中文翻译

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IPD088N06N3G 替代型号

型号	品牌	替代类型	描述	数据表
IPD170N04NG	INFINEON	完全替代	OptiMOS3 Power-Transistor
IPD160N04LG	INFINEON	完全替代	OptiMOS3 Power-Transistor
IPD088N06N3GBTMA1	INFINEON	功能相似	Power Field-Effect Transistor, 50A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Me

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